Chemical Analysis of Multi-Step Deposited and Two-Step (Ultraviolet Ozone cum Rapid Thermal) Annealed Sub-1-nm EOT HfO<sub>2</sub>/TiN Gate Stack for High-k Last Integration

K.S. Yew; D.S. Ang; L.J. Tang; J.S. Pan

doi:https://doi.org/10.7567/SSDM.2013.PS-3-1

[PS-3-1] Chemical Analysis of Multi-Step Deposited and Two-Step (Ultraviolet Ozone cum Rapid Thermal) Annealed Sub-1-nm EOT HfO₂/TiN Gate Stack for High-k Last Integration

K.S. Yew¹、D.S. Ang¹、L.J. Tang²、J.S. Pan³ (1.Nanyang Tech. Univ.、2.Inst. of Microelectronics, A∗STAR、3.Institute of Materials Research and Eng., A∗STAR (Singapore))

https://doi.org/10.7567/SSDM.2013.PS-3-1

2013 International Conference on Solid State Devices and Materials

[PS-3-1] Chemical Analysis of Multi-Step Deposited and Two-Step (Ultraviolet Ozone cum Rapid Thermal) Annealed Sub-1-nm EOT HfO2/TiN Gate Stack for High-k Last Integration

[PS-3-1] Chemical Analysis of Multi-Step Deposited and Two-Step (Ultraviolet Ozone cum Rapid Thermal) Annealed Sub-1-nm EOT HfO₂/TiN Gate Stack for High-k Last Integration