[M-2-3] Impact of Silicon on Diamond Structure for Power-Supply on Chip Applications

K. Nakagawa¹、T. Kodama¹、S. Matsumoto¹、T. Yamada²、M. Hasegawa²、S. Nishizawa² (1.Kyushu Inst. of Tech.、2.The National Inst. Advanced Indus. Sci. and Tech. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[M-2-4] Real Time Monitoring System for Internal Process to Failure of High Power IGBT

A. Watanabe¹、M. Tsukuda^1,2、I. Omura¹ (1.Kyushu Inst. of Tech.、2.The Int'l Centre for the Study of East Asian Development (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[M-2-5] Micro Dynamic Avalanche Phenomenon during Turn-off in Si-IGBTs

S. Machida¹、K. Ito¹、Y. Yamashita¹ (1.Toyota Central R&D Labs. Inc. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[M-2-6] 1200V SC(Schottky Controlled Injection)-Diode - An Advanced Anode Concept for Low Injection Efficiency

T. Matsudai¹、T. Ogura¹、Y. Ohino¹、S. Misu¹、T. Kobayashi²、K. Nakamura¹ (1.Toshiba Corp.、2.Toshiba I.S. Corp. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[M-2-7] Suppression of Reverse Recovery Surge Voltage of Silicon Power Diode by Adjusting Trap Energy Levels through Local Lifetime Control

Y. Yamashita¹、S. Machida¹、T. Sugiyama¹ (1.Toyota Central R&D Labs., Inc. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[M-3-1] Research and Development on Ga₂O₃ Power Devices

M. Higashiwaki¹、K. Sasaki^2,1、M.H. Wong¹、T. Kamimura¹、D. Krishnamurthy¹、A. Kuramata²、T. Masui³、S. Yamakoshi² (1.National Inst. of Info. and Communications Tech.、2.Tamura Corp.、3.Koha Co., Ltd. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[M-3-2] New Concept Power Device; Diamond Vacuum Switch

S. Yamasaki^1,2,3,4、D. Takeuchi^1,2,3、S. Koizumi^2,3,5、T. Makino^1,2,3、M. Ogura^1,2,3、H. Kato^1,2,3、H. Ohashi^1,2,3、H. Okushi^1,2,3 (1.AIST、2.JST-ALCA、3.JST-CREST、4.Univ. of Tsukuba、5.NIMS (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[M-3-3] Gate Oxide Reliability on Large-Area Surface Defects in 4H-SiC Epitaxial Wafers

O. Ishiyama¹、K. Yamada¹、H. Sako¹、K. Tamura¹、M. Kitabatake¹、J. Senzaki^1,2、H. Matsuhata^1,2 (1.R&D Partnership for Future Power Electronics Tech.、2.AIST (Japan))

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[M-3-4] Characterization of a Basal-Plane Dislocation in 4H-SiC by X-Ray Three-Dimensional Topography and Transmission Electron Microscopy

R. Tanuma¹、D. Mori²、H. Tsuchida¹ (1.Central Res. Inst. of Electric Power Industry、2.Fuji Electric Co., Ltd. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[M-3-5] Observation of Deep Levels and Their Hole Capture Behavior in p-type 4H-SiC Epilayers with and without Electron Irradiation

M. Kato¹、K. Yoshihara¹、M. Ichimura¹、T. Hatayama²、T. Ohshima³ (1.Nagoya Inst. of Tech.、2.Nara Inst. of Sci. & Tech.、3.Japan Atomic Energy Agency (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード