Direct Growth of Uniform In-rich InGaN on Si: A New Basic Technology

P. Aseev; P.S. Rodriguez; V.J. Gomez; P. Kumar; N.H. Alvi; J.M. Mánuel; F.M. Morales; J.J. Jiménez; R. García; E. Calleya; R. Nötzel

doi:https://doi.org/10.7567/SSDM.2014.C-3-1

2014 International Conference on Solid State Devices and Materials

2014年9月8日〜 2014年9月11日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[C-3-1] Direct Growth of Uniform In-rich InGaN on Si: A New Basic Technology

P. Aseev¹、P.S. Rodriguez¹、V.J. Gomez¹、P. Kumar¹、N.H. Alvi¹、J.M. Mánuel²、F.M. Morales²、J.J. Jiménez²、R. García²、E. Calleya¹、R. Nötzel¹ (1.Univ. Politécnica de Madrid、2.Univ. de Cádiz (Spain))

https://doi.org/10.7567/SSDM.2014.C-3-1

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