[E-3-5] Enhancement-mode AlGaN/GaN HEMTs by selective area growth of AlGaN layer with Al₂O₃ deposition

T. Narita¹、K. Inoue¹、A. Wakejima¹、T. Egawa¹ (1.Nagoya Inst. of Tech. (Japan))

https://doi.org/10.7567/SSDM.2014.E-3-5