[F-2-1] Band Offsets at High-k Oxide/Semiconductor Interfaces: From Silicon to High-Mobility Channel Materials

V.V. Afanas'ev¹、H.-Y. Chou¹、M. Houssa¹、A. Stesmans¹ (1.Univ. of Leuven (Belgium))

https://doi.org/10.7567/SSDM.2014.F-2-1