[G-2-3] Dominant Factors of Stress-Induced Migration in Electroplated Copper Thin Films Used for Through Silicon Via (TSV) Interconnections

K. Suzuki¹, R. Furuya¹, H. Miura¹ (1.Tohoku Univ. (Japan))

https://doi.org/10.7567/SSDM.2014.G-2-3