Low-temperature Formation of nc-Si in SiO<sub>x</sub> by Soft X-ray Irradiation

F. Kusakabe; S. Hirano; A. Heya; N. Matsuo; K. Kanda; T. Mchizuki; K. Kohama; K. Ito

doi:https://doi.org/10.7567/SSDM.2014.PS-8-3

2014 International Conference on Solid State Devices and Materials

2014年9月8日〜 2014年9月11日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[PS-8-3] Low-temperature Formation of nc-Si in SiO_x by Soft X-ray Irradiation

F. Kusakabe¹、S. Hirano¹、A. Heya¹、N. Matsuo¹、K. Kanda²、T. Mchizuki²、K. Kohama³、K. Ito³ (1.Univ. of Hyogo、2.LASTI, Univ. of Hyogo、3.Osaka Univ. (Japan))

https://doi.org/10.7567/SSDM.2014.PS-8-3

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2014 International Conference on Solid State Devices and Materials

[PS-8-3] Low-temperature Formation of nc-Si in SiOx by Soft X-ray Irradiation

[PS-8-3] Low-temperature Formation of nc-Si in SiO_x by Soft X-ray Irradiation