The Japan Society of Applied Physics

09:45 〜 10:00

[G-3-4] Selective Epitaxy of Ge on Nano-tip Patterned Si (001): Towards Defect-free Ge Islands

G. Niu1, G. Capellini1,2, T. Niermann3, M. Salvalaglio4, A. Marzegalli4, M. A. Schubert1, P. Zaumseil1, H. M. Krause1, O. Skibitzki1, M. Lehmann3, F. Montalenti4, Y. H. Xie5, SchroederT. 1,6 (1.IHP, 2.Univ. Roma Tre, 3.Tech. Univ. Berlin, 4.Univ. degli Studi di Milano-Bicocca, 5.UCLA, 6.BTU Cottbus-Senftenberg(Germany))

https://doi.org/10.7567/SSDM.2015.G-3-4