High Quality GeSn Layer Formation Due to Well-controlled Sn Migration at High Temperature

N. Taoka

doi:https://doi.org/10.7567/SSDM.2015.G-5-1

17:25 〜 17:40

[G-5-1] High Quality GeSn Layer Formation Due to Well-controlled Sn Migration at High Temperature

^○N. Taoka¹, G. Capellini^1,2, P. Zaumseil¹, I. Costina¹, M. A. Schubert¹, T. Schroeder^1,3 (1.Leibniz Inst. for Innovative microelectronics (IHP), 2.Univ. Roma Tre, 3.Univ. of Tech. Brandenburg(Germany))

https://doi.org/10.7567/SSDM.2015.G-5-1

2015 International Conference on Solid State Devices and Materials

[G-5-1] High Quality GeSn Layer Formation Due to Well-controlled Sn Migration at High Temperature