14:30 〜 14:45

[J-1-3] Effects of High-Temperature Diluted-H₂ Annealing on Effective Mobility of 4H-SiC MOSFETs with Thermally-Grown SiO₂

^○H. Hirai¹, K. Kita¹ (1.Univ. of Tokyo(Japan))

https://doi.org/10.7567/SSDM.2015.J-1-3