Threshold Voltage Instability in 4H-SiC MOSFETs with Nitrided Gate Oxide Revealed by Non-relaxation Method

M. Sometani

doi:https://doi.org/10.7567/SSDM.2015.J-6-2

09:30 〜 09:45

[J-6-2] Threshold Voltage Instability in 4H-SiC MOSFETs with Nitrided Gate Oxide Revealed by Non-relaxation Method

^○M. Sometani^1,2, D. Okamoto², S. Harada², H. Ishimori², S. Takasu², T. Hatakeyama², M. Takei^1,2, Y. Yonezawa², K. Fukuda², H. Okumura² (1.Fuji Electric Co., Ltd, 2.AIST(Japan))

https://doi.org/10.7567/SSDM.2015.J-6-2

2015 International Conference on Solid State Devices and Materials

[J-6-2] Threshold Voltage Instability in 4H-SiC MOSFETs with Nitrided Gate Oxide Revealed by Non-relaxation Method