10:00 〜 10:15

[M-3-4] Investigation of Breakdown Characteristics in High-voltage GaN-HEMTs

^○T. Suwa¹, W. Saito¹, T. Uchihara¹, T. Naka¹, T. Kobayashi¹ (1.Toshiba Corp. Semiconductor & Storage Products Company(Japan))

https://doi.org/10.7567/SSDM.2015.M-3-4