16:10 〜 16:25

[M-4-2] Embedded Source Field-Plate for Reduced Parasitic Capacitance of AlN/GaN MIS-HEMTs on Si Substrate

^○K. Chikamatsu¹, M. Akutsu¹, T. Tanaka¹, S. Takado¹, K. Sakamoto¹, N. Ito¹, K. Nakahara¹ (1.ROHM Co., Ltd.(Japan))

https://doi.org/10.7567/SSDM.2015.M-4-2