Top-Gated Epitaxial Bilayer MoSe<sub>2</sub> Transistors on AlN Wafers & the Impact of Top-down Process-Induced Damage

M. Manfrini

2015 International Conference on Solid State Devices and Materials

Sep 27, 2015 - Sep 30, 2015
Sapporo Convention Center, Sapporo, Japan

[PS-13-13] Top-Gated Epitaxial Bilayer MoSe₂ Transistors on AlN Wafers & the Impact of Top-down Process-Induced Damage

^○M. Manfrini¹, S. Sutar¹, S. Brems¹, P. Tsipas², K. E. Aretouli², E. Xenogiannopoulou², A. Dimoulas², A. C. Mocuta¹, I. P. Radu¹, A. Thean¹ (1.IMEC, 2.NCSR Demokritos(Belgium))

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2015 International Conference on Solid State Devices and Materials

[PS-13-13] Top-Gated Epitaxial Bilayer MoSe2 Transistors on AlN Wafers & the Impact of Top-down Process-Induced Damage

[PS-13-13] Top-Gated Epitaxial Bilayer MoSe₂ Transistors on AlN Wafers & the Impact of Top-down Process-Induced Damage