[PS-1-5] Sub-0.2V Switching Voltage of Negative Capacitance Double Gate Tunnel FET using Ferroelectric Gate

^○M. H. Lee¹, C. Liu¹, P. G. Cheng¹, C. C. Cheng¹, K. Y. Chu¹, M. J. Xie¹, S. N. Liu¹, J. W. Lee¹, S. J. Huang¹, M. H. Liao² (1.National Taiwan Normal Univ., 2.National Taiwan Univ.(Taiwan))

2015 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-1-6] Fabrication of Low-Temperature (< 400 °C) Germanium MOSCAPs by Microwave Thermal Oxidation

^○W. C. Chi¹, C. C. Hsu^1,2, C. H. Chou¹, A. S. Shih¹, Y. J. Lee², C. H. Chien¹ (1.National Chiao Tung Univ., 2.National Nano Device Labs.(Taiwan))

2015 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-1-7] High-Performance P-Channel Polycrystalline-Germanium Thin Film Transistors via Excimer Laser Crystallization and Counter Doping

^○C. Y. Liao¹, C. Y. Huang¹, M. H. Huang¹, C. H. Chou¹, H. C. Cheng¹ (1.National Chiao Tung Univ.(Taiwan))

2015 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-1-8] UV Raman and Multiwavelength Photoluminescence Characterization of Ion Implanted Silicon for In-Line Dopant Activation Process Monitoring Applications

^○W. S. Yoo¹, T. Ishigaki¹, T. Ueda¹, K. Kang¹, N. Hasuike², H. Harima², M. Yoshimoto² (1.WaferMasters, Inc., 2.Kyoto Inst. of Tech.(USA))

2015 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-1-9] Influence of in-situ Sb-Doping on Crystalline and Electrical Characteristics of n-type Ge_1-xSn_x Epitaxial Layer

^○J. Jeon¹, T. Asano^1,2, W. Takeuchi¹, M. Kurosawa^1,3, O. Nakatsuka¹, S. Zaima^1,3 (1.Nagoya Univ., 2.Res. Fellow of the Japan Society for the Promotion of Sci., 3.EcoTopia Sci. Inst., Nagoya Univ.(Japan))

2015 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-1-10] n⁺Si/pGe Cross Heterojunctions Fabricated by Narrow Membrane Bonding

^○T. C. Liu^1,2, S. Kabuyanagi^1,2, T. Nishimura^1,2, A. Toriumi^1,2 (1.Univ. of Tokyo, 2.JST-CREST(Japan))

2015 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-1-11] PtGe-Source/Drain Ge p-MOSFET with High On/Off Ratio and Low Parasitic Resistance

^○S. Tanaka¹, Y. Nagatomi¹, Y. Nagaoka¹, K. Yamamoto¹, D. Wang¹, H. Nakashima¹ (1.Kyushu Univ.(Japan))

2015 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-1-12] Impact of Ultra-high Sn Content Sn_xGe_1-x Interlayer on Reducing Schottky Barrier Height at Metal/n-Ge Interface

^○A. Suzuki¹, O. Nakatsuka¹, S. Shibayama^1,2, M. Sakashita¹, W. Takeuchi¹, M. Kurosawa^1,3, S. Zaima^1,3 (1.Graduate School of Eng., Nagoya Univ., 2.Res. Fellow of The Japan Society for the Promotion of Sci., 3.EcoTopia Sci. Inst., Nagoya Univ.(Japan))

2015 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-1-13] Introduction of SiGe/Si Heterojunction into Novel Multilayer Tunnel FinFETs

^○Y. Morita¹, T. Mori¹, K. Fukuda¹, W. Mizubayashi¹, S. Migita¹, K. Endo¹, S. O'uchi¹, Y. X. Liu¹, M. Masahara¹, T. Matsukawa¹, H. Ota¹ (1.AIST(Japan))

2015 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-1-14] Observation of Plastic and Elastic Deformations in Ge Films of Bonded GeOI

^○T. Nishimura¹, T. Nakamura¹, T. Yajima¹, A. Toriumi¹ (1.Univ. of Tokyo(Japan))

2015 International Conference on Solid State Devices and Materials |PDF ダウンロード