Effective Interface Passivation by In-Situ Remote-Plasma Gas Treatments for In0.53Ga0.47As MOSFET and FinFET Applications

Q. H. Luc

doi:https://doi.org/10.7567/SSDM.2016.N-1-05

2016 International Conference on Solid State Devices and Materials

2016年9月26日〜 2016年9月29日
Tsukuba International Congress Center, Tsukuba, Japan

14:45 〜 15:00

[N-1-05] Effective Interface Passivation by In-Situ Remote-Plasma Gas Treatments for In_0.53Ga_0.47As MOSFET and FinFET Applications

^○Q. H. Luc¹, C. C. Chang¹, P. C. Chang¹, H. B. Do¹, J. W. Lin¹, K. S. Yang¹, C. C. F. Chang¹, M. T. H. Ha¹, S. H. Huynh¹, Y. C. Lin¹, E. Y. Chang¹ (1.NCTU(Taiwan))

https://doi.org/10.7567/SSDM.2016.N-1-05

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2016 International Conference on Solid State Devices and Materials

[N-1-05] Effective Interface Passivation by In-Situ Remote-Plasma Gas Treatments for In0.53Ga0.47As MOSFET and FinFET Applications

[N-1-05] Effective Interface Passivation by In-Situ Remote-Plasma Gas Treatments for In_0.53Ga_0.47As MOSFET and FinFET Applications