The Japan Society of Applied Physics

15:00 〜 17:00

[PS-6-05] Atomic-Layer Deposited High-k Metal Gates of Ge/III Metal -Oxide-Semiconductor Devices and numerical simulations

B. Y. Chen1,2,C. L. Chu1, J. L. Chen3, G. L. Luo1, T. T. Li4, E. Y. Chang2 (1.National Nano Device Labs.(Taiwan), 2.NCTU(Taiwan), 3.I-Shou Univ.(Taiwan), 4.National Central Univ.(Taiwan))

https://doi.org/10.7567/SSDM.2016.PS-6-05