16:10 〜 16:30

[E-2-02] Effect of SiGe Layer Thickness in Starting Substrate on Electrical Properties of Ultrathin Body Ge-on-Insulator pMOSFET Fabricated by Ge Condensation

^○K. -W. Jo¹, W. -K. Kim¹, M. Takenaka¹, S. Takagi¹ (1.Univ. of Tokyo (Japan))

https://doi.org/10.7567/SSDM.2017.E-2-02