3:15 PM - 3:45 PM

[C-6-01 (Invited)] Investigation of Ferroelectric Switching Mechanism and Improvement of Switching Speed in Si doped HfO₂ for FeRAM Application

^○H.K. Yoo¹, J.S. Kim¹, Z. Zhu², M.R. MacDonald³, X. Lei³, T.Y. Lee⁴, D. Lee^4,5, S. Lee¹, A. Yoon², S.C. Chae⁴, J. Park^4,5, D. Hemker², J.G. Langan³, Y. Nishi⁶, J.K. Kim¹ (1.SK Hynix Inc. (Korea), 2.Lam Res. Corp. (USA), 3.Versum Materials Inc. (USA), 4.Seoul National Univ. (Korea), 5.CNR, Inst. for Basic Sci. (Korea), 6.Stanford Univ. (USA))

https://doi.org/10.7567/SSDM.2018.C-6-01