Performance improvement by template-induced crystallization in ferroelectric HfO<sub>2</sub> tunnel junction memory for cross-point high-density application

S. Kabuyanagi

doi:https://doi.org/10.7567/SSDM.2018.C-6-03

16:00 〜 16:15

[C-6-03] Performance improvement by template-induced crystallization in ferroelectric HfO₂ tunnel junction memory for cross-point high-density application

^○S. Kabuyanagi¹, S. Fujii¹, K. Usuda¹, M. Yamaguchi¹, T. Ino¹, Y. Nakasaki¹, R. Takaishi¹, Y. Kamimuta¹, M. Saitoh¹ (1.Toshiba Memory Corporation (Japan))

https://doi.org/10.7567/SSDM.2018.C-6-03

2018 International Conference on Solid State Devices and Materials

[C-6-03] Performance improvement by template-induced crystallization in ferroelectric HfO2 tunnel junction memory for cross-point high-density application

[C-6-03] Performance improvement by template-induced crystallization in ferroelectric HfO₂ tunnel junction memory for cross-point high-density application