16:30 〜 16:45

[D-2-04] Reduction of SiO₂/4H-SiC Interface Defects by H₂O-Post-Nitridation-Annealing

^○M. Nishida¹, R. Sakuta¹, H. Hirai¹, K. Kita¹ (1.Univ. of Tokyo (Japan))

https://doi.org/10.7567/SSDM.2018.D-2-04