Vertical-Type 2DHG Diamond MOSFETs with a Few Micro Meter Length Trench Structure

M. Iwataki

doi:https://doi.org/10.7567/SSDM.2018.D-3-04

10:00 〜 10:15

[D-3-04] Vertical-Type 2DHG Diamond MOSFETs with a Few Micro Meter Length Trench Structure

^○M. Iwataki¹, N. Oi¹, K. Horikawa¹, S. Amano¹, T. Kageura¹, M. Inaba², A. Hiraiwa^1,3, H. Kawarada^1,3 (1.Waseda Univ. (Japan), 2.Nagoya Univ. (Japan), 3.Kagami Memorial Res. Inst. for Materials Sci. and Tech. (Japan))

https://doi.org/10.7567/SSDM.2018.D-3-04

2018 International Conference on Solid State Devices and Materials

[D-3-04] Vertical-Type 2DHG Diamond MOSFETs with a Few Micro Meter Length Trench Structure