15:15 〜 15:30

[F-8-06] Flexible thermoelectric SiGe films formed by Al-induced layer exchange

^○K. Kusano¹, A. Yamamoto², T. Suemasu¹, K. Toko^1,3 (1.Univ. of Tsukuba (Japan), 2.AIST (Japan), 3.JST PRESTO (Japan))

https://doi.org/10.7567/SSDM.2018.F-8-06