The Japan Society of Applied Physics

15:45 〜 16:00

[H-6-03] Elimination of APBs in a GaAs layer directly-grown on an on-axis Si(001) substrate by optimizing an AlGaAs nucleation layer

J. Kwoen1, J. Lee2, K. Watanabe2, Y. Arakawa1,2 (1.NanoQuine, Univ. of Tokyo (Japan), 2.IIS, Univ. of Tokyo (Japan))

https://doi.org/10.7567/SSDM.2018.H-6-03