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[PS-1-14] Improvement in GaAsSb/InGaAs double-gate tunnel FET using thermal evaporation for gate electrode and Al₂O₃/ZrO₂ for gate insulator

^○R. Aonuma¹, N. Kise¹, Y. Miyamoto¹ (1.Tokyo Tech (Japan))

https://doi.org/10.7567/SSDM.2018.PS-1-14