Novel InAs/GaSb Heterostructure Nanowire Based Tunnel Field Effect Transistor

R.K. Kakkerla

doi:https://doi.org/10.7567/SSDM.2018.PS-8-27

11:00 〜 13:30

[PS-8-27 (Late News)] Novel InAs/GaSb Heterostructure Nanowire Based Tunnel Field Effect Transistor

^○R.K. Kakkerla¹, S.K. Singh¹, H.B. Joseph³, A. Gupta², D. Anandan¹, V. Nagarajan¹, H.W. Yu¹, E.Y. Chang¹ (1.National Chiao Tung University (Taiwan), 2.Indian Institute of Technology Delhi (India), 3.SRM University (India))

https://doi.org/10.7567/SSDM.2018.PS-8-27

2018 International Conference on Solid State Devices and Materials

[PS-8-27 (Late News)] Novel InAs/GaSb Heterostructure Nanowire Based Tunnel Field Effect Transistor