09:45 〜 10:00

[A-3-03] High sensitive biosensor with extended-gate ISFETs based on in-plane-gate structure a-IGZO TFTs with engineered gate oxide

^○J.H. Jeon¹, W.J. Cho¹ (1.Univ. of Kwangwoon (Korea))

https://doi.org/10.7567/SSDM.2019.A-3-03