9:30 AM - 9:45 AM

[F-5-03] Novel approach for Growth Mechanism of Atomic Layer Epitaxy of GaAs and AlAs

^○N. Ohtsuka¹, M. Oda¹, T. Eshita^1,2, I. Tanaka¹, C. Itoh¹ (1.Wakayama Univ. (Japan), 2.Fujitsu Semiconductor LTD. (Japan))

https://doi.org/10.7567/SSDM.2019.F-5-03