14:45 〜 15:00

[H-1-03] HfO_x/Al₂O₃ Bilayer RRAM with Enhanced Endurance and Synaptic Behavior with Highly Stable Potentiation/ Depression Operation

^○E.Y.-J. Lee¹, K.-C. Chuang¹, H.-C. Cheng¹ (1.National Chiao Tung Univ. (Taiwan))

https://doi.org/10.7567/SSDM.2019.H-1-03