17:15 〜 17:30

[H-2-07] Hybrid 6T SRAM Cell Using Hysteretic Negative-Capacitance FETs as Pass-Gate Devices for Low-Voltage Applications

^○K.-Y. Tseng¹, W.-X. You¹, P. Su¹ (1.National Chiao Tung Univ. (Taiwan))

https://doi.org/10.7567/SSDM.2019.H-2-07