Simulation Study: the Effect of Random Dopants and Random Traps on Hot-Carrier Degradation in nFinFETs

A. Makarov

doi:https://doi.org/10.7567/SSDM.2019.N-6-04

11:15 〜 11:30

[N-6-04] Simulation Study: the Effect of Random Dopants and Random Traps on Hot-Carrier Degradation in nFinFETs

^○A. Makarov¹, B. Kaczer², P. Roussel², A. Chasin², M. Vandemaele², G. Hellings², A.-M. El-Sayed¹, M. Jech¹, T. Grasser¹, D. Linten², S. Tyaginov^1,2 (1.TU Wien (Austria), 2.imec (Belgium))

https://doi.org/10.7567/SSDM.2019.N-6-04

2019 International Conference on Solid State Devices and Materials

[N-6-04] Simulation Study: the Effect of Random Dopants and Random Traps on Hot-Carrier Degradation in nFinFETs