Theoretical approach to oxygen incorporation mechanism in vicinal m-GaN MOVPE

F. Shintaku

doi:https://doi.org/10.7567/SSDM.2019.PS-4-14

13:00 〜 15:00

[PS-4-14] Theoretical approach to oxygen incorporation mechanism in vicinal m-GaN MOVPE

^○F. Shintaku¹, Y. Kangawa^1,2,3, J. Iwata⁴, A. Oshiyama³, K. Shiraishi³, A. Tanaka³, H. Amano³ (1.Dept. Aeronautics and Astronautics, Kyushu Univ. (Japan), 2.RIAM, Kyushu Univ. (Japan), 3.IMaSS, Nagoya Univ. (Japan), 4.AdvanceSoft Corp. (Japan))

https://doi.org/10.7567/SSDM.2019.PS-4-14

2019 International Conference on Solid State Devices and Materials

[PS-4-14] Theoretical approach to oxygen incorporation mechanism in vicinal m-GaN MOVPE