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[PS-4-23] Effect of Post-metallization Annealing on Interface Properties of Al₂O₃/GaN Fabricated on c- and m-plane Free-standing GaN Substrates

^○Y. Ando¹, T. Nakamura², M. Deki², N. Taoka¹, A. Tanaka^2,3, H. Watanabe², M. Kushimoto¹, S. Nitta², Y. Honda², H. Amano^2,3,4,5 (1.Dept. of Electronics, Nagoya Univ. (Japan), 2.IMaSS, Nagoya Univ. (Japan), 3.NIMS (Japan), 4.ARC, Nagoya Univ. (Japan), 5.VBL, Nagoya Univ. (Japan))

https://doi.org/10.7567/SSDM.2019.PS-4-23