Critical Impact of Ferroelectric-Phase Formation Annealing on MFIS Interface of HfO<sub>2</sub>-Based Si FeFETs

Kasidit Toprasertpong

doi:https://doi.org/10.7567/SSDM.2020.A-1-02

14:15 〜 14:30

[A-1-02] Critical Impact of Ferroelectric-Phase Formation Annealing on MFIS Interface of HfO₂-Based Si FeFETs

〇Kasidit Toprasertpong¹, Kento Tahara¹, Taichiro Fukui¹, Zaoyang Lin¹, Kouhei Watanabe¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (1. Univ. of Tokyo(Japan))

https://doi.org/10.7567/SSDM.2020.A-1-02

2020 International Conference on Solid State Devices and Materials

[A-1-02] Critical Impact of Ferroelectric-Phase Formation Annealing on MFIS Interface of HfO2-Based Si FeFETs

[A-1-02] Critical Impact of Ferroelectric-Phase Formation Annealing on MFIS Interface of HfO₂-Based Si FeFETs