Chemical Structure of SiN Films Deposited on High Aspect Trench by Plasma Enhanced Atomic Layer Deposition

Tappei Nishihara

doi:https://doi.org/10.7567/SSDM.2020.A-6-04

17:00 〜 17:15

[A-6-04] Chemical Structure of SiN Films Deposited on High Aspect Trench by Plasma Enhanced Atomic Layer Deposition

〇Tappei Nishihara¹, Ryo Yokogawa^1,2, Yuji Otsuki³, Munehito Kagaya³, Atsushi Ogura^2,1 (1. Meiji Univ.(Japan), 2. Meiji Renewable Energy Lab.(Japan), 3. Tokyo Electron Technology Solutions Ltd.(Japan))

https://doi.org/10.7567/SSDM.2020.A-6-04

2020 International Conference on Solid State Devices and Materials

[A-6-04] Chemical Structure of SiN Films Deposited on High Aspect Trench by Plasma Enhanced Atomic Layer Deposition