14:15 〜 14:30

[D-5-02] Impact of Growth Direction on Crystal Quality and DC Characteristics of In(Ga)P/InGaAsSb DHBTs Transferred onto SiC Substrate

〇Takuya Hoshi¹, Yuta Shiratori¹, Hiroki Sugiyama¹, Hideaki Matsuzaki¹ (1. NTT Device Technology Labs., NTT Corp.(Japan))

https://doi.org/10.7567/SSDM.2020.D-5-02