High-Speed Ge/Si Electro-Absorption Optical Modulator with C-band Wavelengths Operation at high Temperature up to 85℃

Junichi Fujikata

doi:https://doi.org/10.7567/SSDM.2020.E-9-01

2:00 PM - 2:30 PM

[E-9-01(Invited)] High-Speed Ge/Si Electro-Absorption Optical Modulator with C-band Wavelengths Operation at high Temperature up to 85℃

〇Junichi Fujikata¹, Masataka Noguchi¹, Kazuki Kawashita³, Riku Katamawari³, Hideki Ono^1,2, Daisuke Shimura^1,2, Yosuke Onawa^1,2, Hiroyuki Takahashi^1,2, Hiroki Yaegashi^1,2, Yasuhiko Ishikawa³, Takahiro Nakamura¹ (1. PETRA(Japan), 2. Oki Electric Industry Co., Ltd.(Japan), 3. Toyohashi Univ. Tech.(Japan))

https://doi.org/10.7567/SSDM.2020.E-9-01

2020 International Conference on Solid State Devices and Materials

[E-9-01(Invited)] High-Speed Ge/Si Electro-Absorption Optical Modulator with C-band Wavelengths Operation at high Temperature up to 85℃