Activation of Dopant Atoms in Silicon by Microwave-Induced Rapid Heating with Wireless Carbon Heating Tubes

Masahiko Hasumi

doi:https://doi.org/10.7567/SSDM.2020.F-10-07

17:30 〜 17:45

[F-10-07] Activation of Dopant Atoms in Silicon by Microwave-Induced Rapid Heating with Wireless Carbon Heating Tubes

〇Masahiko Hasumi¹, Toshiyuki Sameshima¹, Ryota Seki¹, Takuma Uehara¹, Takuji Arima¹, Tomoyoshi Miyazaki^1,2, Go Kobayashi³, Izumi Serizawa³ (1. Tokyo Univ. of Agri. and Tech.(Japan), 2. Techno Research., Ltd.(Japan), 3. ORC MANUFACTURING CO., LTD.(Japan))

https://doi.org/10.7567/SSDM.2020.F-10-07

2020 International Conference on Solid State Devices and Materials

[F-10-07] Activation of Dopant Atoms in Silicon by Microwave-Induced Rapid Heating with Wireless Carbon Heating Tubes