16:43 〜 16:50

[A-6-06] A Robust Single Device MOSFET Series Resistance Extraction Method Considering Horizontal-Field-Dependent Mobility

〇Kiyoshi Takeuchi¹、Tomoko Mizutani¹、Takuya Saraya¹、Masaharu Kobayashi¹、Toshiro Hiramoto¹ (1.Univ. of Tokyo)

https://doi.org/10.7567/SSDM.2021.A-6-06