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[A-7-04] Width Dependence of Drain Current Variability Components in Extremely Narrow GAA Silicon Nanowire MOSFETs down to 2nm Width

〇Zihao Liu¹, Tomoko Mizutani¹, Takuya Saraya¹, Masaharu Kobayashi¹, Toshiro Hiramoto¹ (1.Inst. of Indus. Sci., The Univ. of Tokyo)

https://doi.org/10.7567/SSDM.2021.A-7-04