16:43 〜 16:50

[B-2-06] Investigation of Random Telegraph Noise Characteristics of Hf-based MONOS Nonvolatile Memory Devices with HfO₂ and HfON Tunneling Layer

〇Jooyoung Pyo¹、Akio Ihara¹、Shun-ichiro Ohmi¹ (1.Tokyo Inst. Tech.)

https://doi.org/10.7567/SSDM.2021.B-2-06