16:43 〜 16:50

[C-6-06] Preparation of Zr/ZrO_x/Pt structure for forming free resistive random access memory

〇Yuki Kawai¹、Masaru Sato¹、Mayumi B. Takeyama¹ (1.Kitami Institute of Technology)

https://doi.org/10.7567/SSDM.2021.C-6-06