Characterization of Local Strain in 4H-SiC Trench MOSFET by Synchrotron Nanobeam X-ray Diffraction

Wakana Takeuchi, Eiji Kagoshima, Kazushi Sumitani, Yasuhiko Imai, Shigehisa Shibayama, Mitsuo Sakashita, Shigeru Kimura, Hidemoto Tomita, Tsuyoshi  Nishiwaki, Hirokazu Fujiwara, Osamu Nakatsuka

doi:https://doi.org/10.7567/SSDM.2021.D-4-09

12:04 PM - 12:11 PM

[D-4-09] Characterization of Local Strain in 4H-SiC Trench MOSFET by Synchrotron Nanobeam X-ray Diffraction

〇Wakana Takeuchi¹, Eiji Kagoshima², Kazushi Sumitani³, Yasuhiko Imai³, Shigehisa Shibayama⁴, Mitsuo Sakashita⁴, Shigeru Kimura³, Hidemoto Tomita², Tsuyoshi Nishiwaki², Hirokazu Fujiwara², Osamu Nakatsuka⁴ (1.Aichi Inst. of Tech., 2.MIRISE Tech., 3.JASRI, 4.Nagoya Univ.)

https://doi.org/10.7567/SSDM.2021.D-4-09

2021 International Conference on Solid State Devices and Materials

[D-4-09] Characterization of Local Strain in 4H-SiC Trench MOSFET by Synchrotron Nanobeam X-ray Diffraction