16:29 〜 16:36

[D-6-04] DC Characteristics of the p-NiO_x/n-Ga₂O₃ Junction FETs Based on Heterointegrated Ga₂O₃-on-SiC by Ion Cutting Process

〇Haodong Hu¹、Hehe Gong²、Wenhui Xu³、Yibo Wang¹、Tiangui You³、Genquan Han¹、Jiandong Ye²、Xin Ou³、Yan Liu¹、Yue Hao¹ (1.Xidian University、2.Nanjing University、3.Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences)

https://doi.org/10.7567/SSDM.2021.D-6-04