H  igh-performance     β-Ga<sub>2</sub>O<sub>3</sub> Solar-Blind Metal-Oxide-Semiconductor Field-Effect Phototransistor Based on Hafnium Oxide     Gate Dielectric

Zhe Li

doi:https://doi.org/10.7567/SSDM.2021.E-6-03

16:22 〜 16:29

[E-6-03] H igh-performance β-Ga₂O₃ Solar-Blind Metal-Oxide-Semiconductor Field-Effect Phototransistor Based on Hafnium Oxide Gate Dielectric

〇Zhe Li¹、Zhaoqing Feng¹、Yu Xu¹、Qian Feng¹、Jincheng Zhang¹、Chunfu Zhang¹、Yue Hao¹ (1.Wide Bandgap Semiconductor Tech. Disciplines State Key Lab., School of Microelectronics, Xidian University)

https://doi.org/10.7567/SSDM.2021.E-6-03

2021 International Conference on Solid State Devices and Materials

[E-6-03] H igh-performance β-Ga2O3 Solar-Blind Metal-Oxide-Semiconductor Field-Effect Phototransistor Based on Hafnium Oxide Gate Dielectric

[E-6-03] H igh-performance β-Ga₂O₃ Solar-Blind Metal-Oxide-Semiconductor Field-Effect Phototransistor Based on Hafnium Oxide Gate Dielectric