4:50 PM - 4:57 PM

[H-6-07] High performance SnS/h-BN heterostructure p-FET via Ti contact reaction

〇Yih-Ren Chang¹, Takashi Taniguchi², Kenji Watanabe², Tomonori Nishimura¹, Kosuke Nagashio¹ (1.Univ. of Tokyo, 2.NIMS)

https://doi.org/10.7567/SSDM.2021.H-6-07