Isotropic TFT Mobility in the (100)-Oriented Grain-Boundary-Free Huge Si Thin Film Grown by the Continuous-Wave-Laser Lateral Crystallization

Nobuo Sasaki, Muhammad Arif, Satoshi Takayama, Jun Gotoh, Shigeto Sugimoto, Yukiharu Uraoka

doi:https://doi.org/10.7567/SSDM.2021.J-4-04

11:29 AM - 11:36 AM

[J-4-04] Isotropic TFT Mobility in the (100)-Oriented Grain-Boundary-Free Huge Si Thin Film Grown by the Continuous-Wave-Laser Lateral Crystallization

〇Nobuo Sasaki^1,2,3, Muhammad Arif², Satoshi Takayama², Jun Gotoh³, Shigeto Sugimoto³, Yukiharu Uraoka² (1.Sasaki Consulting, 2.Nara. Inst. of Sci. and Tech., 3.V-Tech.)

https://doi.org/10.7567/SSDM.2021.J-4-04

2021 International Conference on Solid State Devices and Materials

[J-4-04] Isotropic TFT Mobility in the (100)-Oriented Grain-Boundary-Free Huge Si Thin Film Grown by the Continuous-Wave-Laser Lateral Crystallization