Operando Hard X-ray Photoelectron Spectroscopy Study of Buried Interface Chemistry of Au/In2O3/Al2O3/p+-Si Stacks under Applied Bias

Ibrahima Gueye, Riku Kobayashi, Shigenori Ueda, Toshihide Nabatame, Kazuhito Tsukagoshi, Atsushi Ogura, Takahiro Nagata

doi:https://doi.org/10.7567/SSDM.2021.J-5-02

2:30 PM - 2:37 PM

[J-5-02] Operando Hard X-ray Photoelectron Spectroscopy Study of Buried Interface Chemistry of Au/In₂O₃/Al₂O₃/p⁺-Si Stacks under Applied Bias

〇Ibrahima Gueye¹, Riku Kobayashi^1,2, Shigenori Ueda¹, Toshihide Nabatame³, Kazuhito Tsukagoshi³, Atsushi Ogura^2,4, Takahiro Nagata^1,2,3 (1.National Institute for Materials Science (NIMS), Research Center for Functional Materials, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, 2.Graduate School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki, Kanagawa 214-8571, 3.International Center for Materials Nanoarchitectonics (WPI-MANA), NIMS, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, 4.Meiji Renewable Energy Laboratory, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki, Kanagawa 214-8571)

https://doi.org/10.7567/SSDM.2021.J-5-02

2021 International Conference on Solid State Devices and Materials

[J-5-02] Operando Hard X-ray Photoelectron Spectroscopy Study of Buried Interface Chemistry of Au/In2O3/Al2O3/p+-Si Stacks under Applied Bias

[J-5-02] Operando Hard X-ray Photoelectron Spectroscopy Study of Buried Interface Chemistry of Au/In₂O₃/Al₂O₃/p⁺-Si Stacks under Applied Bias