High Ge-Content SiGe Films Epitaxially Grown by Annealing Al-Ge Alloyed Pastes on Si Substrate

Keisuke Fukuda

doi:https://doi.org/10.7567/SSDM.2021.K-6-08

16:57 〜 17:04

[K-6-08] High Ge-Content SiGe Films Epitaxially Grown by Annealing Al-Ge Alloyed Pastes on Si Substrate

〇Keisuke Fukuda¹、Satoru Miyamoto¹、Masahiro Nakahara ²、Shota Suzuki²、Marwan Dhamrin^2,4、Kensaku Maeda³、Kozo Fujiwara³、Noritaka Usami¹ (1.Nagoya Univ.、2.Toyo Alminium Corp.、3.Tohoku Univ.、4.Osaka Univ.)

https://doi.org/10.7567/SSDM.2021.K-6-08

2021 International Conference on Solid State Devices and Materials

[K-6-08] High Ge-Content SiGe Films Epitaxially Grown by Annealing Al-Ge Alloyed Pastes on Si Substrate