Metrology to Support Processing and Development of 4H-SiC CMOS and Power Devices at Fraunhofer IISB from Research to Multi Project Wafer Services

14:00 〜 14:30

[B-2-01 (Invited)] Metrology to Support Processing and Development of 4H-SiC CMOS and Power Devices at Fraunhofer IISB from Research to Multi Project Wafer Services

〇Mathias Rommel¹, Tobias Erlbacher¹ (1. Fraunhofer Inst. for Integrated Systems and Device Tech. IISB (Germany))

Presentation style: Online